BJT vs FET
Ob leeg BJT (Bipolar Junction Transistor) thiab FET (Field Effect Transistor) yog ob hom transistors. Transistor yog ib qho khoom siv hluav taws xob semiconductor uas muab lub teeb liab hloov hluav taws xob ntau rau kev hloov pauv me me hauv cov teeb liab me me. Vim qhov zoo no, cov cuab yeej siv tau los ua ib qho amplifier lossis hloov. Transistor tau tso tawm xyoo 1950 thiab nws tuaj yeem suav tias yog ib qho tseem ceeb tshaj plaws tsim nyob rau xyoo 20th xav txog nws txoj kev koom tes rau kev txhim kho IT. Ntau hom architectures rau transistor tau raug sim.
Bipolar Junction Transistor (BJT)
BJT yog muaj ob PN junctions (ib qho kev sib txuas ua los ntawm kev sib txuas p hom semiconductor thiab n hom semiconductor). Ob qhov kev sib txuas no yog tsim los ntawm kev sib txuas ntawm peb daim semiconductor hauv kev txiav txim ntawm P-N-P lossis N-P-N. Muaj ob hom BJTs hu ua PNP thiab NPN muaj.
Peb lub tshuab hluav taws xob txuas nrog peb qhov chaw semiconductor thiab cov hlau lead nruab nrab hu ua 'puag'. Lwm ob qhov kev sib tshuam yog 'emitter' thiab 'collector'.
Hauv BJT, cov khoom loj loj emitter (Ic) tam sim no yog tswj los ntawm lub hauv paus me me emitter tam sim no (IB) thiab cov cuab yeej no yog siv los tsim cov amplifiers lossis keyboards. Muaj rau nws tuaj yeem suav tau tias yog lub tshuab tsav tam sim no. BJT feem ntau yog siv hauv amplifier circuits.
Field Effect Transistor (FET)
FET yog ua los ntawm peb lub davhlau ya nyob twg hu ua 'Gate', 'Source' thiab 'Drain'. Ntawm no ntws tam sim no yog tswj los ntawm lub rooj vag voltage. Yog li, FETs yog cov khoom siv hluav taws xob tswj hluav taws xob.
Nyob ntawm hom semiconductor siv rau qhov chaw thiab ntws (hauv FET ob leeg yog ua los ntawm tib hom semiconductor), FET tuaj yeem yog N channel lossis P channel ntaus ntawv. Qhov chaw kom ntws tawm tam sim no yog tswj los ntawm kev kho cov channel dav los ntawm kev siv qhov tsim nyog rau qhov rooj. Kuj tseem muaj ob txoj hauv kev los tswj cov channel dav hu ua depletion thiab txhim kho. Yog li FETs muaj nyob rau hauv plaub yam sib txawv xws li N channel lossis P channel nrog ob qho tib si hauv depletion lossis kev txhim kho hom.
Muaj ntau hom FETs xws li MOSFET (Metal Oxide Semiconductor FET), HEMT (High Electron Mobility Transistor) thiab IGBT (Insulated Gate Bipolar Transistor). CNTFET (Carbon Nanotube FET) uas tau tshwm sim los ntawm kev txhim kho nanotechnology yog tus tswv cuab tshiab ntawm FET tsev neeg.
Qhov txawv ntawm BJT thiab FET
1. BJT yog ib qho cuab yeej uas tau tsav tam sim no, txawm hais tias FET raug suav hais tias yog lub tshuab hluav taws xob tswj hluav taws xob.
2. Terminals ntawm BJT yog lub npe hu ua emitter, collector thiab base, whereas FET yog ua los ntawm lub rooj vag, qhov chaw thiab ntws.
3. Hauv feem ntau ntawm cov ntawv thov tshiab, FETs tau siv dua li BJTs.
4. BJT siv ob qho tib si electrons thiab qhov rau conduction, whereas FET siv tsuas yog ib tug ntawm lawv thiab li no hu ua unipolar transistors.
5. FETs muaj zog npaum li BJTs.
